MJ431

isc Silicon NPN Power Transistor MJ431 DESCRIPTION ·Collector-Emitter Voltage- : VCEX = 400V(Min) ·DC Current Gain- : hFE= 15-35@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCB=400V; IE= 0 VCB=400V; IE= 0;TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2.5A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.2A ;VCE= 10V; ftest=1MHz MJ431 MIN TYP. MAX UNIT ...