Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor b...
Power
Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
inner circuit
C
B
R1 R2
E
R1 3.5kΩ R2 300Ω
B : Base C : Collector E : Emitter
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
6
Collector current Collector power dissipation
IC PC
2 3 ∗1 1
10
Junction temperature
Tj 150
Storage temperature
∗1 Single pulse Pw=100ms
Tstg
−55 to +150
Unit V V V
A(DC) A(Pulse)
W
W(Tc=25°C) °C °C
Packaging specifications and hFE
Type
2SD1980
Package
CPT3
hFE 1k to 10k
Marking
−
Code
TL
Basic ordering unit (pieces)
2500
∗ Denotes hFE
Dimensions (Unit : mm)
2SD1980
6.5 5.1
2.3 0.5
0.9 5.5 1.5
1.5 9.5
0.8Min. 2.5
0.75
0.9 2.3 (1) (2)
0.65 (3) 2.3
ROHM : CPT3 EIAJ : SC-63
0.5 1.0
(1) ...
