isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5450
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1600V (Mi...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5450
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
10
A
ICP Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
25 A 70 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5450
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Coll...
