Si4606

Features ·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch Tstg PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings N-Ch P-Ch 30 -30 +20 +20 6.9 -6 30 -30 1.3 1.3 1.7 1.7 150 -55~+150 Unit V V A A W W 0C 0C Pin Description 1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay ...