Document
Semiconductor
THN450Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product fT = 16 GHz @ VCE = 2 V, IC = 50 mA fT = 18 GHz @ VCE = 3 V, IC = 70 mA
- High power gain |S21|2 = 12 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz MAG = 14 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz
- Low noise figure NF = 1.5 dB @ VCE = 2 V, IC = 7 mA, f = 1.8 GHz
□ Absolute Maximum Ratings ( TA = 25 ℃ )
Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature
Sym bol BVCBO BVCEO BVEBO
IC Ptot Tj Tstg
Caution : Electro Static Discharge sensitive device
13 24
Pin Configuration
1. Base 2. Emitter 3. Emitter 4. Collector
Ratings 10 4.5 1.5 100 450 150
-65 ~ 150
Unit V V V mA
mW ℃ ℃
1
□ Electrical Characteristics ( TA = 25 ℃ )
Para.