Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4501 Series
SOT-523
SiGe NPN Transistor Un...
Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4501 Series
SOT-523
SiGe
NPN Transistor Unit in mm
□ FEATURES
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.5 dB at f = 2 GHz, VCE = 1 V, IC = 7 mA
o High Transition Frequency fT = 11 GHz at f = 2 GHz, VCE = 3 V, IC = 50 mA
□ hFE Classification
Marking AK1
AK2
hFE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
VCBO
VCEO VEBO
IC PT TSTG TJ
Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1B
2E
3C
Description Base Emitter
Collector
□ Available Package
Product
Package
THN4501U SOT-323
THN4501Z SOT-343
THN4501E SOT-523
Unit : mm Dimension
2.0ⅹ1...