MJD128

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -120 20 1.75 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD128 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor MJD128 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ,IB= -16mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA -4.0 V VBE(sat) Base-Emitter Satura...