MJD127

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 PC PC Rth j-a Total Power Dissipation @ Ta=25℃ Collector Power Dissipation TC=25℃ Thermal Resistance,Junction to Ambient 1.75 20 71.4 TJ Junction Temperature 150 A W W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(ON) Base-Emitter voltage ICEO Collector Cutoff Current IC=-4A; IB= -16mA IC=-8A; IB= -80mA IC=-8A; IB= -80mA IC= -4A; VCE= -4V VCE=-50V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V; IC= 0 hFE1 DC Current Gain hFE2 ...