isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead for...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation Ta=25℃
PC
Collector Power Dissipation TC=25℃
TJ
Junction Temperature
-4
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
MJD117
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isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
VBE(on)* Base-Emitter On Voltage
IC=-2A; VCE=-3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
ICBO
Collector Cutoff Current
VCB=- 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC=-0.5A; VCE= ...
