MJ10012T

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.9 ℃/W MJ10012T isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJ10012T ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On V...