Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR7100
FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR7100
FEATURES ·
Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
IF(AV) IFSM
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
100 70 7.5 150
V V A A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered t...
