MBR6045WT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR6045WT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ Per Diode Per Device Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 45 30 60 500 2.0 V A A A TJ Junction Temp...