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TIP3055T Dataheets PDF



Part Number TIP3055T
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet TIP3055T DatasheetTIP3055T Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emi.

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IC Collector Current-Peak 12 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 75 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W TIP3055T isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC= 4A; IB= 0.4A IC= 4A; VCE= 4V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB=0 VCB= 70V; IE=0; VCB= 70V; IE=0; Tj= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= 4V hFE-2 DC Current Gain IC= 10A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V Switching Times ton Turn-On Time tf Turn-Off Time IC= 2A; IB1= -IB2= 0.2A TIP3055T MIN MAX UNIT 60 V 0.8 V 4.0 V 1.8 V 1.8 V 0.2 mA 0.1 1.0 mA 0.5 mA 20 70 5 2 MHz 1.0 μs 4.0 μs isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TIP3055T NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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