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TIP2955T

Part Number	TIP2955T
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon PNP Power Transistor TIP2955T DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC ...
Datasheet	TIP2955T PDF File

Overview

isc Silicon PNP Power Transistor TIP2955T DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -10 A IC Collector Current-Peak -12 A IB Base Current -4 A PC Collector Power Dissipat...

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