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ST26025A
Silicon PNP Power Transistor
Description
INCHANGE Semiconductor isc Silicon
PNP
Darlington Power
Transistor
isc Product Specification ST26025A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High DC Current Gain- : hFE= 750(Min.)@IC= -10A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device performance an...
Inchange Semiconductor
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