isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD32C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use...
