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MJD31C Dataheets PDF



Part Number MJD31C
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MJD31C DatasheetMJD31C Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collecto.

  MJD31C   MJD31C


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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature 100 V 100 V 5 V 3 A 5 A 1 A 15 W 1.56 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD31C isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICES Collector Cutoff Current VCE= 100V; VEB= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V MJD31C MIN MAX UNIT 100 V 1.2 V 1.8 V 20 uA 50 uA 1.0 mA 25 10 50 3 MHz isc Silicon NPN Power Transistors isc Website:www.iscsemi.com 2 MJD31C isc & iscsemi is registered trademark Outline Drawing NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc Website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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