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MJD148

Part Number	MJD148
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Vol...
Datasheet	MJD148 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.
5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.
5V(Max.
)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Powe...

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