Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40L45CT
FEATURES ·Low forward voltage ·High surge capacity ·Low P...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40L45CT
FEATURES ·Low forward voltage ·High surge capacity ·Low Power Loss,High Efficiency ·Guard ring for stress protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
45
V
IF(AV)
Average Rectified Forward Current
40
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 200
A
on rated load conditions
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40L45CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 1.9
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 20A ; Tc= 25℃
IF= 20A ; Tc= 125℃
VF
Maximum Instantaneous Forward Voltage
IF= 40A ; Tc= 25℃
IF= 40A ; Tc= 125℃
VR= VRWM;Tc= 25℃
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tc= 125℃
MAX 0.5 0.48 0.63 0.68 1.2 275
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a...
