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MBR2030CTL

ON Semiconductor

Dual Schottky Power Rectifier

MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • Highly Stable Oxide Passivated Junction ...


ON Semiconductor

MBR2030CTL

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Description
MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) High Junction Temperature High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* Applications Power Supply − Output Rectification Power Management − ORING Instrumentation Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec ESD Rating: Human Body Model 3B Machine Model C www.onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 30 VOLTS 1 2, 4 3 MARKING DIAGRAM 4 1 2 3 TO−220 CASE 221A STYLE 6 AYWW B2030LG AKA A Y WW B2030L G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device MBR2030CTLG Package TO−220 (Pb−Free) Shipping 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 1 January, 2015 − Rev. ...




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