MD56V62160E
4-Bank 1,048,576-Word 16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160E-07
Issue Date: Nov. 18, 2013
DESCRI...
MD56V62160E
4-Bank 1,048,576-Word 16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160E-07
Issue Date: Nov. 18, 2013
DESCRIPTION
The MD56V62160E is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
FEATURES
Silicon gate, quadruple poly-silicon CMOS, 1-
transistor memory cell 4-Bank 1,048,576-word 16-bit configuration Single 3.3 V power supply, 0.3 V tolerances Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode
- CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave) CBR auto-refresh, Self-refresh capability Packages: 54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.80-UK6)
(Product: MD56V62160E-xxTA) xx indicates speed rank.
PRODUCT FAMILY
Family
MD56V62160E-10
Max. Frequency...