MD56V62160E

MD56V62160E 4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov. 18, 2013 DESCRIPTION The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell 4-Bank  1,048,576-word  16-bit configuration Single 3.3 V power supply, 0.3 V tolerances Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave) CBR auto-refresh, Self-refresh capability Packages: 54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.80-UK6) (Product: MD56V62160E-xxTA) xx indicates speed rank. PRODUCT FAMILY Family MD56V62160E-10 Max. Frequency...