C3M0120090J
VDS ID @ 25˚C
900 V 22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low...
