C3M0065090J
VDS ID @ 25˚C
900 V 35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features New C3M SiC MOSFET technology New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capac...
