ACE7310M

ACE7310M N-Channel 30-V (D-S) MOSFET Description The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Applications  DC/DC Conversion  Power Routing  Motor Drives PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 30 5.5@ VGS = 10V 21 7.8 @ VGS = 4.5V 17 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulse Drain Current b TA=25 OC TA=70 OC Continuous Drain Current (Diode Continuous) a Power Dissipation a TA=25 OC TA=70 OC Operating Junction and Storage Temperature Range Symbol Limit Units VDS 30 V VGS ±20 V 21 ID 17.2 A IDM 80 IS 4.7 A 3.5 PD W 2 TJ,TSTG -55 to 150 OC Parame...