ACE5208

ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications. Features Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Applications PWM application Load switch Battery charge in cellular handset Absolute Maximum Ratings Parameter Symb ol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS -12 V VGS ±8 Drain Current-Continuous Drain Current-Pulsed (note 1) ID -6 A IDM -20 Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD 1.5 W 12 Thermal Resistance from Junction to Ambient (note 4) RθJA Thermal Resistance from Junction to case (note 4) RθJC 83.3 ℃/W 10.4 Junction Temperature Storage Temperature TJ 150 ℃ TSTG -55~+150 Packaging Type VER 1.1 1 ACE5208 P...