MSN15B5H

MSN15B5H 150V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ） ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment Lead Free TO-247 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN15B5H MSN15B5H TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipati...