MSN15B0K

MSN15B0K 150V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =150V,ID =100A RDS(ON) <12mΩ @ VGS=10V (Typ:9.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN15B0K MSN15B0K TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC =25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Con...