MSN10B1K
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =100V,ID =110A RDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capa...
