MSN08B1K
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V
(Typ:7.5mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for g...
