Document
MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B0F
MSN06B0F
TO-220F
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current Maxi.