Document
MSN0603L
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Battery switch ●DC/DC converter
PIN Configuration
Lead Free
Marking and Pin Assignment D
G
SOT-23 -3L Top View
S Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0603L
SOT-23-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60 ±20
3 10 1.7 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5 ℃/W.