MSN05B2K
55V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V
(Typ:4.1mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology fo...
