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MSN0360D Dataheets PDF



Part Number MSN0360D
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel MOSFET
Datasheet MSN0360D DatasheetMSN0360D Datasheet (PDF)

MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Co.

  MSN0360D   MSN0360D


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MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0360D MSN0360D TO-252-2L Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum.


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