MSN0350D

MSN0350D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin assignment PIN Configuration TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0350D MSN0350D TO-252-2L Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) P...