MSN0318W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptibl...
