Dual N-Channel Enhancement Mode Power MOS FET
MSC8205S
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VG...
Description
MSC8205S
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● Battery protection ● Load switch ● Power management
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23-6L top view
D1 G1
G2
D2
S1 S2 Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
8205
MSC8205S
SOT-23-6L
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±10
6 25 1.25 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistanc...
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