Part Number |
V40PW45C |
Manufacturers |
Vishay |
Logo |
|
Description |
Trench MOS Barrier Schottky Rectifier |
Datasheet |
V40PW45C Datasheet (PDF) |
www.vishay.com
V40PW45C
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.33 V at IF = 5 A
eSMP® Series
1
2 SlimDPAK (TO-252AE)
PIN 1
K
PIN 2
HEATSINK
ADDITIONAL RESOURCES
3D 3D
3D Models
K
FEATURES
• Very low profile - typical height of 1.3 mm
Available
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
40 A 45 V 240 A
VF at IF = 20 A (TA = 125 °C)
0.49 V
TJ max. Package
150 °C SlimDPAK (TO-252AE)
C.