Part Number |
V40PW10C |
Manufacturers |
Vishay |
Logo |
|
Description |
Trench MOS Barrier Schottky Rectifier |
Datasheet |
V40PW10C Datasheet (PDF) |
www.vishay.com
V40PW10C
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.44 V at IF = 5 A
eSMP® Series
1
2 SlimDPAK (TO-252AE)
PIN 1 PIN 2
K HEATSINK
K
FEATURES
• Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
40 A
VRRM
100 V
IFSM
240 A
VF at IF = 20 A (TA = 125 °C)
0.70 V
TJ max.
150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Common cathode
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewhe.