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Part Number V40PW10C
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet V40PW10C DatasheetV40PW10C Datasheet (PDF)

  V40PW10C   V40PW10C
www.vishay.com V40PW10C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK K FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 40 A VRRM 100 V IFSM 240 A VF at IF = 20 A (TA = 125 °C) 0.70 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewhe.



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