MTC3588BDFA6

CYStech Electronics Corp. Spec. No. : C102DFA6 Issued Date : 2015.12.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET MTC3588BDFA6 N-CH BVDSS 14V P-CH -14V ID 6A(VGS=4.5V) -4A(VGS=-4.5 V) 16.6mΩ(VGS=4.5V) 43mΩ(VGS=-4.5V) RDSON(TYP.) 23.7mΩ(VGS=2.5V) 38.5mΩ(VGS=1.8V) 63.6mΩ(VGS=-2.5V) 86.5mΩ(VGS=-1.8V) 66.3mΩ(VGS=1.5V) 153.3mΩ(VGS=-1.5V) Description The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Pb-free lead plating and halogen-free package Low on-resistance Fast switching speed Low gate charge Equivalent Circuit MTC3588BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain ...