MTC3586DFA6

CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2013.06.03 Revised Date : 2013.10.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3586DFA6 N-CH BVDSS 20V ID 5A(VGS=4.5V) 27mΩ(VGS=4.5V) P-CH -20V -3.3A(VGS=-4.5 V) 78mΩ(VGS=-4.5V) Description RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586DFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC358...