N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 1/8
N-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB090N06I3 BVDSS ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=3A VGS=4.5V, ID=2A
60V 5A 70mΩ 82mΩ
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
Symbol
MTB090N06I3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB090N06I3-0-UJ-G
Package
Shipping
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 100 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UJ : 80 pcs / tube, 100 tubes/box
Product rank, zero for no rank products
Product name
MTB090N06I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage...
Similar Datasheet