TIP140T

TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VCEO Collector-Emitter Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VEBO Emitter-Base Voltage 5V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to +150 °C * These ratings are limiting va...