TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
TIP140T / TIP141T / TIP142T NPN Epitaxial Sil...
TIP140T / TIP141T / TIP142T —
NPN Epitaxial Silicon Darlington
Transistor
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington
Transistor
Features
Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T
Equivalent Circuit C
July 2009
B
1 TO-220 1.Base 2.Collector 3.Emitter
R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ
R2 E
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP140T : TIP141T : TIP142T
60 V 80 V 100 V
VCEO
Collector-Emitter Voltage : TIP140T : TIP141T : TIP142T
60 V 80 V 100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current (DC)
10 A
ICP Collector Current (Pulse)
15 A
IB Base Current (DC)
0.5 A
PC Collector Dissipation (TC=25°C)
80 W
TJ Junction Temperature
150 °C
TSTG
Storage Temperature
-65 to +150
°C
* These ratings are limiting va...