BDX33, 34
Darlington Transistors
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX...
BDX33, 34
Darlington
Transistors
Features:
Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C
Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case)
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN BDX33B BDX33C
PNP BDX34B BDX34C
10 Ampere Complementary Silicon
Power
Transistors 80 - 100 Volts 70 Watts
TO-220
Page 1
31/05/05 V1.0
BDX33, 34
Darlington
Transistors
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current-Continuous -Peak
Base Current
Total Power Dissipation at TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO
IC ICM IB
P...
