Document
Silicon PNP Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C
·Complement to Type BDW93/A/B/C
APPLICATIONS ·Designed for hammer drivers, audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW94
-45
VCBO
Collector-Base Voltage
BDW94A BDW94B
-60 -80
V
BDW94C
-100
BDW94
-45
VCEO
Collector-Emitter Voltage
BDW94A BDW94B
-60 -80
V
BDW94C
-100
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICM Collector Current-Peak
IB Base Current Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
Tstg Storage Temperature Range
-15 -0.2 80 150 -65~150
A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.5
UNIT ℃/W
1
Product Specification
BDW94/A/B/C
Silicon PNP Power Transistor
ELECTRICAL CHARACTER.