High Power Bipolar Transistors
Tip Series
Features:
• Collector-Emitter sustaining voltage-
VCEO (sus) = 60 V (Minimu...
High Power Bipolar
Transistors
Tip Series
Features:
Collector-Emitter sustaining voltage-
VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A
= 100 V (Minimum) - TIP29C, TIP30C
Collector-Emitter saturation voltage-
VCE (sat)
= 0.7 V (Maximum) at IC = 1 A
Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA
Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case)
Dimensions
A B C D E F G H I J K L M O
Maximum Ratings
Characteristic
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
- Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Minimum
Maximum
14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.2 0.33 2.48 3.7
15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98
3.9
Dimensions : Millimetres
NPN PNP TIP29A TIP30A TIP29C TIP30C
1A Complementary Silicon
Power
Transistors 40 - 100 V 30 W
TO-220
Symbol
VCEO VCBO VE...
