1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulat...
1165892
High power
NPN silicon power
transistors.
These devices are designed for linear amplifiers, series pass
regulators, and inductive
switching applications.
Features:
Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
Pb-free packages.
(TO-3)
Style 1: Pin 1. Base
2. Emitter Collector (Case)
Dimensions Minimum
Maximum
A 1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D 0.038 (0.97) 0.043 (1.09)
E 0.055 (1.40) 0.070 (1.77)
G 0.430 (10.92) BSC
H 0.215 (5.46) BSC
K 0.440 (11.18) 0.480 (12.19)
L 0.665 (16.89) BSC
N - 0.830 (21.08)
Q 0.151 (3.84) 0.165 (4.19)
U 1.187 (30.15) BSC
V 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres)
20 and 30 Ampere Power
Transistors
NPN Silicon 40 and 60 Volts, 150 Watts
(TO-3) Case 1-07
Style 1
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
Page <1>
22/10/08 V1.1
1165892
Maximum Ratings (Note 1)
Rating
Symbol
2N3772
Unit
Collector-Emitte...
