2N5655G, 2N5657G
Plastic NPN Silicon High-Voltage Power Transistors
These devices are designed for use in line−operated...
2N5655G, 2N5657G
Plastic
NPN Silicon High-Voltage Power
Transistors
These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays.
Features
Excellent DC Current Gain High Current−Gain − Bandwidth Product These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage 2N5655G 2N5657G
VCEO
250 350
Vdc
Collector−Base Voltage 2N5655G 2N5657G
VCB Vdc 275
375
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEB 6.0 Vdc
IC 0.5 Adc
ICM 1.0 Adc
IB 1.0 Adc
PD 20 W 0.16 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to + 150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should ...
