BD234 BD236 BD238
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDU...
BD234 BD236 BD238
SILICON
PNP POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD234, BD236, and BD238 are silicon
PNP power
transistors designed for medium power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
BD234 45
45
45
BD236 60 60 60 5.0 2.0 6.0 25
-65 to +150
BD238 100
100
80
ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
IEBO
VEB=5.0V
BVCEO
IC=100mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=2.0V, IC=1.0A
hFE VCE=2.0V, IC=150mA
hFE VCE=2.0V, IC=1.0A
fT VCE=10V, IC=250mA
BD234 MIN MAX
- 100 - 1.0 45 - 0.6 - 1.3 40 25 3.0 -
BD236...