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BD137G Dataheets PDF



Part Number BD137G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Plastic Medium-Power Silicon NPN Transistors
Datasheet BD137G DatasheetBD137G Datasheet (PDF)

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G .

  BD137G   BD137G


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BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G VCEO 45 60 80 Vdc Collector−Base Voltage BD135G BD137G BD139G VCBO 45 60 100 Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC IB PD 5.0 Vdc 1.5 Adc 0.5 Adc 1.25 Watts 10 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 Watts 100 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table.


BD135G BD137G BD139G


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