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BD135G, BD137G, BD139G
Plastic Medium-Power Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD135G BD137G BD139G
VCEO
45 60 80
Vdc
Collector−Base Voltage BD135G BD137G BD139G
VCBO
45 60 100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC IB PD
5.0 Vdc 1.5 Adc 0.5 Adc
1.25 Watts 10 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 12.5 Watts
100 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table.