MJD32CT4

MJD32C Low voltage PNP power transistor Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C Application ■ General purpose linear and switching equipment Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Datasheet − production data TAB 3 1 DPAK TO-252 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking MJD32CT4 MJD32C Package DPAK June 2012 This is information on a product in full production. Doc ID 13673 Rev 4 Packaging Tape and reel 1/13 www.st.com 13 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total d...